Process Variation Aware Dram ( Dynamic Random Access Memory ) Design Using Block - Based Adaptive Body
نویسندگان
چکیده
Process Variation Aware DRAM (Dynamic Random Access Memory) Design Using Block-Based Adaptive Body Biasing Algorithm
منابع مشابه
Design of Process Variation 3T1D-Based DRAM Using CADENCE
[email protected] [email protected] Abstract— This Paper Deals With the Design and Analysis of 3T1D DRAM Cell to develop Process Variation Architectures using Cadence Tool. With continued technology scaling, process variations will be especially Detrimental to Threetransistor One Diode Dynamic memory structures (3T1D DRAM). A Memory architecture using three-transistor, onediode DRAM...
متن کاملDynamic voltage frequency scaling-aware refresh management for 3D DRAM over processor architecture
ELECT Three-dimensional integrated systems that combine large-capacity dynamic random access memory (DRAM) with high-performance processors represent a promising solution to implementing high-performance computing. However, in such configurations stacked DRAM cells will inevitably be exposed to high temperatures generated by the processor, thereby necessitating DRAMs with high refresh rates dri...
متن کاملIRAM Design for Multimedia Applications
Bum-Sik Kim, Yun Ho Choi , and Lee-Sup Kim Korea Advance Institute of Science and Technology E-mail:[email protected] *SAMSUNG Electronics Co., LTD. E-mail:[email protected] Abstract There are strong demands for high speed and low power to realize systems on silicon. However, the current circuit design technologies for MPU and DRAM are based on their own optimized process technolog...
متن کاملEmbedded DRAM: Technology platform for the Blue Gene/L chip
The Blue Genet/L chip is a technological tour de force that embodies the system-on-a-chip concept in its entirety. This paper outlines the salient features of this 130-nm complementary metal oxide semiconductor (CMOS) technology, including the IBM unique embedded dynamic random access memory (DRAM) technology. Crucial to the execution of Blue Gene/L is the simultaneous instantiation of multiple...
متن کاملCouture: Tailoring STT-MRAM for Persistent Main Memory
Modern computer systems rely extensively on dynamic random-access memory (DRAM) to bridge the performance gap between on-chip cache and secondary storage. However, continuous process scaling has exposed DRAM to high off-state leakage and excessive power consumption from frequent refresh operations. Spintransfer torque magnetoresistive RAM (STT-MRAM) is a plausible replacement for DRAM, given it...
متن کامل